G.C.-F. Yeap

Hot carrier effects in nMOSFETs in 0.1 μm CMOS technology

E. Li, Elyse Rosenbaum, J. Tao et al. · 2003 · 47 citations

Engineering, Electrical Engineering, Microelectronics +16

Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-Å gate oxide MOSFETs

Khaled Ahmed, E. Ibok, G.C.-F. Yeap et al. · IEEE Transactions on Electron Devices · 1999 · 43 citations

Engineering, Electrical Engineering, Microelectronics +16

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

H.‐H. Tseng, Y. Jeon, P. Abramowitz et al. · IEEE Electron Device Letters · 2002 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Plasma doping for shallow junctions

Matthew Goeckner, Susan B. Felch, Ziwei Fang et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 28 citations

Engineering, Electrical Engineering, Physics +17

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

G.C.-F. Yeap, J. Chen, Piotr Grudowski et al. · 2003 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17