Y. Jeon

Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8 Å-12 Å)

Byoung Hun Lee, Rino Choi, Laegu Kang et al. · 2002 · 54 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

H.‐H. Tseng, Y. Jeon, P. Abramowitz et al. · IEEE Electron Device Letters · 2002 · 41 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

H.‐H. Tseng, C. Capasso, J. Schaeffer et al. · 2005 · 35 citations

Materials Engineering, Electrical Engineering, Engineering +12

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

G.C.-F. Yeap, J. Chen, Piotr Grudowski et al. · 2003 · 21 citations

Low-power Electronics, Electrical Engineering, Transistor Performances +15

A high density 0.10 μm CMOS technology using low K dielectric and copper interconnect

Shivendra Singh Parihar, M. Angyal, B. Boeck et al. · 2002 · 15 citations

Engineering, Vlsi Design, Computer Architecture +18