P. Abramowitz

Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology

H.‐H. Tseng, Y. Jeon, P. Abramowitz et al. · IEEE Electron Device Letters · 2002 · 41 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Dual-metal gate CMOS with HfO/sub 2/ gate dielectric

S. Samavedam, L.B. La, James A. Smith et al. · 2003 · 37 citations

Dual-metal Integration, Electrical Engineering, Engineering +9

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

G.C.-F. Yeap, J. Chen, Piotr Grudowski et al. · 2003 · 21 citations

Low-power Electronics, Electrical Engineering, Transistor Performances +15

Realistic Projections of Product Fmax Shift and Statistics due to HCI and NBTI

A. Haggag, M.W. Lemanski, Gary A. Anderson et al. · 2007 · 17 citations

Product Fmax Shift, Engineering, Physics +6

Correction of Self-Heating for HCI Lifetime Prediction

Jocelyn Roux, X. Federspiel, D. Roy et al. · 2007 · 12 citations

Engineering, Different Transistor Widths, Lifetime Prediction +22