Ziwei Fang - Concepedia

Author

Ziwei Fang

Varian Medical Systems (United States)

Also Known As

Z Fang, Z. Fang, Zebing Fang, Ziwei Fang, Ziwei Fang Ziwei Fang

Publications

209

Citations

H-Index

Concepts

All Affiliations

Varian Medical Systems (United States)STMicroelectronics (France)Orange (France)

About

Ziwei Fang is an author at Varian Medical Systems (United States) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	155
2	Applied Physics	8	8	155
3	Electrical Engineering	6	6	96
4	Materials Engineering	1	1	16
5	Materials Science	1	1	28

Ziwei Fang

Publications

165

Citations

H-Index

Page 1

	Year	Citations
Plasma doping for the fabrication of ultra-shallow junctions Susan B. Felch, Ziwei Fang, Bon Wong Koo, Surface and Coatings Technology EngineeringPhysicsNanoelectronicsApplied PhysicsUltra-shallow Junctions	2002	46
Plasma doping for shallow junctions Matthew Goeckner, Susan B. Felch, Ziwei Fang, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Shallow JunctionsEngineeringBf3 PlasmaIntegrated CircuitsSemiconductor Device	1999	28
Ion energy distributions in a pulsed plasma doping system Svetlana Radovanov, Ludovic Godet, Rajesh Dorai, Journal of Applied Physics Electrical EngineeringPulsed Dc PlasmaIon Energy DistributionsEngineeringPhysics	2005	20
Plasma doping system for 200 and 300 mm wafers R.B. Liebert, S.R. Walther, Susan B. Felch, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Materials EngineeringElectrical EngineeringPlasma IgnitionEngineeringDopant Gases	2003	16
USJ formation using pulsed plasma doping J.T. Scheuer, D. Lenoble, J.-P. Reynard, Surface and Coatings Technology EngineeringPhysicsApplied PhysicsPlasma SciencePlasma Physics	2004	13
Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology F. Lallement, A. Grouillet, M. Juhel, Surface and Coatings Technology Electrical EngineeringEngineeringPhysicsNanoelectronicsApplied Physics	2004	11
Plasma doping implant depth profile calculation based on ion energy distribution measurements Ludovic Godet, Ziwei Fang, Svetlana Radovanov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Electrical EngineeringIncident Ion MassEngineeringIon ImplantationApplied Physics	2006	11
Direct comparison of electrical performance of 0.1-μm pMOSFETs doped by plasma doping or low energy ion implantation D. Lenoble, A. Grouillet, F. Arnaud, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)	2003	10
Plasma characterization of a plasma doping system for semiconductor device fabrication Bon-Woong Koo, Susan B. Felch, Ziwei Fang SemiconductorsElectrical EngineeringIon ImplantationEngineeringPhysics	2000	10

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