M. Woo

A functional 0.69 μm/sup 2/ embedded 6T-SRAM bit cell for 65 nm CMOS platform

F. Arnaud, F. Salvetti, D. Lenoble et al. · 2004 · 30 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 100 nm copper/low-k bulk CMOS technology with multi Vt and multi gate oxide integrated transistors for low standby power, high performance and RF/analog system on chip applications

G.C.-F. Yeap, J. Chen, Piotr Grudowski et al. · 2003 · 21 citations

Engineering, Computer Engineering, Electrical Engineering +17

A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs

J.D. Hayden, T.C. Mele, A.H. Perera et al. · IEEE Transactions on Electron Devices · 1992 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +15

A quadruple well, quadruple polysilicon BiCMOS process for fast 16 Mb SRAM's

J.D. Hayden, R.C. Taft, P.U. Kenkare et al. · IEEE Transactions on Electron Devices · 1994 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17

Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping

F. Lallement, B. Duriez, A. Grouillet et al. · 2004 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +17