P.U. Kenkare

Relationship between trapped holes, positive ions, and interface states in irradiated Si-SiO2 structures

P.U. Kenkare, S. A. Lyon · Applied Physics Letters · 1989 · 34 citations

Engineering, Materials Engineering, Materials Science +17

Scaling of poly-encapsulated LOCOS for 0.35 μm CMOS technology

P.U. Kenkare, C. Mazuré, J.D. Hayden et al. · IEEE Transactions on Electron Devices · 1994 · 16 citations

Engineering, Electrical Engineering, Low-power Design +16

Kinetic analysis of silicon oxidations in the thin regime by incremental growth

Sergio A. Ajuria, P.U. Kenkare, Anh Nghiem et al. · Journal of Applied Physics · 1994 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +17

A quadruple well, quadruple polysilicon BiCMOS process for fast 16 Mb SRAM's

J.D. Hayden, R.C. Taft, P.U. Kenkare et al. · IEEE Transactions on Electron Devices · 1994 · 12 citations

Engineering, Computer Engineering, Electrical Engineering +17