Sergio A. Ajuria - Concepedia

Author

Sergio A. Ajuria

Motorola (United States)

Also Known As

S. A. Ajuria, S. Ajuria, S.A. Ajuria, Sergio A. Ajuria, Sergio Ajuria

Publications

678

Citations

H-Index

Concepts

All Affiliations

Motorola (United States)Massachusetts Institute of Technology

About

Sergio A. Ajuria is an author at Motorola (United States) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	623
2	Applied Physics	11	12	585
3	Chemical Engineering	5	5	343
4	Chemistry	4	4	278
5	Medicine	1	1	38

Sergio A. Ajuria

Publications

623

Citations

H-Index

Page 1

	Year	Citations
Growth and surface chemistry of oxynitride gate dielectric using nitric oxide Rama I. Hegde, Philip J. Tobin, K. Reid, Applied Physics Letters EngineeringNitric OxideOptoelectronic DevicesThin Film Process TechnologyChemistry	1995	139
Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO) Philip J. Tobin, Yoshio Okada, Sergio A. Ajuria, Journal of Applied Physics Materials EngineeringMaterials ScienceChemical EngineeringNitrous OxideFurnace Formation	1994	128
Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O Yoshio Okada, Philip J. Tobin, Vikas Lakhotia, Applied Physics Letters Chemical EngineeringElectrical EngineeringN2o OxynitridesEngineeringPure N2o	1993	84
Furnace grown gate oxynitride using nitric oxide (NO) Y Okada, Philip J. Tobin, K. Reid, IEEE Transactions on Electron Devices Oxygen Reduction ReactionSemiconductor TechnologyElectrical EngineeringChemical EngineeringEngineering	1994	79
Early stage evolution kinetics of the polysilicon/single-crystal silicon interfacial oxide upon annealing Sergio A. Ajuria, R. Reif Journal of Applied Physics EngineeringOxide Void GrowthPolysilicon/single-crystal SiliconSilicon On InsulatorVoid Size	1991	41
Evaluation of Interfacial Nitrogen Concentration of RTP Oxynitrides by Reoxidation Yoshio Okada, Philip J. Tobin, Vikas Lakhotia, Journal of The Electrochemical Society Chemical EngineeringEngineeringRtp OxynitridesReactive Nitrogen SpecieReoxidation Thickness	1993	38
Interface contribution to the capacitance of thin-film Al-Al2O3-Al trilayer structures A. F. Hebard, Sergio A. Ajuria, R. H. Eick Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringDielectric ThicknessEngineering	1987	32
Gate oxynitride grown in nitric oxide (NO) Y Okada, Philip J. Tobin, K. Reid, Semiconductor TechnologyInorganic ChemistryElectrical EngineeringEngineeringReactive Nitrogen Specie	2002	17
Scaling of poly-encapsulated LOCOS for 0.35 μm CMOS technology P.U. Kenkare, C. Mazuré, J.D. Hayden, IEEE Transactions on Electron Devices Materials ScienceNmosfet CharacteristicsElectrical EngineeringEngineeringVlsi Design	1994	16
Kinetic analysis of silicon oxidations in the thin regime by incremental growth Sergio A. Ajuria, P.U. Kenkare, Anh Nghiem, Journal of Applied Physics EngineeringOxidation ResistanceSilicon On InsulatorChemical EngineeringThin Regime	1994	14

Page 1