Sergio A. Ajuria

Growth and surface chemistry of oxynitride gate dielectric using nitric oxide

Rama I. Hegde, Philip J. Tobin, K. Reid et al. · Applied Physics Letters · 1995 · 139 citations

Engineering, Nitric Oxide, Optoelectronic Devices +18

Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)

Philip J. Tobin, Yoshio Okada, Sergio A. Ajuria et al. · Journal of Applied Physics · 1994 · 128 citations

Materials Engineering, Materials Science, Chemical Engineering +11

Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

Yoshio Okada, Philip J. Tobin, Vikas Lakhotia et al. · Applied Physics Letters · 1993 · 84 citations

Chemical Engineering, Electrical Engineering, N2o Oxynitrides +8

Furnace grown gate oxynitride using nitric oxide (NO)

Y Okada, Philip J. Tobin, K. Reid et al. · IEEE Transactions on Electron Devices · 1994 · 79 citations

Oxygen Reduction Reaction, Semiconductor Technology, Electrical Engineering +12

Early stage evolution kinetics of the polysilicon/single-crystal silicon interfacial oxide upon annealing

Sergio A. Ajuria, R. Reif · Journal of Applied Physics · 1991 · 41 citations

Engineering, Oxide Void Growth, Polysilicon/single-crystal Silicon +16