Concepedia

Furnace grown gate oxynitride using nitric oxide (NO)

Y Okada, Philip J. Tobin, K. Reid, R. I. Hegde, B. Maiti, Sergio A. Ajuria

IEEE Transactions on Electron Devices · 1994 · 79 citations · 12 references

DOI

Concepts

Abstract

Gate oxynitride was grown in NO for the first time. This approach can provide a tight N accumulation near the Si/SiO/sub 2/ interface. Much lower thermal budget is required for an NO process than for an N/sub 2/O process to produce an oxynitride with useful properties. Submicron MOSFET's with NO oxynitride showed superior current drive characteristics and comparable hot carrier immunity to those with N/sub 2/O oxynitride.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

12

Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

Hyunsang Hwang, Wenchi Ting, B. Maiti et al. · Applied Physics Letters · 1990 · 209 citations

, , +15

Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)

Philip J. Tobin, Yoshio Okada, Sergio A. Ajuria et al. · Journal of Applied Physics · 1994 · 128 citations

, , +11

Relationship between growth conditions, nitrogen profile, and charge to breakdown of gate oxynitrides grown from pure N2O

Yoshio Okada, Philip J. Tobin, Vikas Lakhotia et al. · Applied Physics Letters · 1993 · 84 citations

, , +8

Highly reliable thin nitrided SiO <sub>2</sub> films formed by rapid thermal processing in an N <sub>2</sub> O ambient

Hisashi Fukuda, T. Arakawa, Seigo Ohno · Electronics Letters · 1990 · 71 citations

The performance and reliability of 0.4 micron MOSFET's with gate oxynitrides grown by rapid thermal processing using mixtures of N/sub 2/O and O/sub 2/

Y Okada, Philip J. Tobin, Peter Rushbrook et al. · IEEE Transactions on Electron Devices · 1994 · 63 citations

, , +11