H.-J. Wann - Concepedia

Author

H.-J. Wann

University of California, Berkeley

Also Known As

H. J. Wann, H. Wann, H.-J. Wann, H.-J.C. Wann, H.J. Wann, Hsing-Jen Wann, Hsing-jen Wann

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley Hong Kong Polytechnic University City University of Hong Kong

About

H.-J. Wann is an author at University of California, Berkeley specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	1.2K
2	Applied Physics	9	9	1.2K
3	Computer Engineering	3	3	987
4	Chemical Engineering	2	2	106
5	Chemistry	2	2	106

H.-J. Wann

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
CMOS scaling into the nanometer regime Yuan Taur, D. A. Buchanan, Wei Chen, Proceedings of the IEEE EngineeringVlsi DesignSilicon On InsulatorNanoelectronicsCmos Technology	1997	882
Effects of N/sub 2/O anneal and reoxidation on thermal oxide characteristics Zhaowei Liu, H.-J. Wann, P.K. Ko, IEEE Electron Device Letters EngineeringOxidation ResistancePost-oxidation N/sub 2/OChemistryNitrogen Incorporation	1992	65
A capacitorless DRAM cell on SOI substrate H.-J. Wann, Chenming Hu Non-volatile MemoryElectrical EngineeringCapacitorless DramEngineeringVlsi Design	2002	59
Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on HfO2 high-K dielectric Lei Wu, H.Y. Yu, X. Li, Applied Physics Letters EngineeringTin Metal GateSemiconductor DeviceSemiconductorsNanoelectronics	2010	46
A 7.9/5.5 psec room/low temperature SOI CMOS F. Assaderaghi, W. Rausch, A. Ajmera, Low-power ElectronicsRoom TemperatureElectrical EngineeringEngineeringVlsi Design	2002	46
Improvement of charge trapping characteristics of N/sub 2/O-annealed and reoxidized N/sub 2/O-annealed thin oxides Z. Liu, H.-J. Wann, P.K. Ko, IEEE Electron Device Letters Materials ScienceOxygen Reduction ReactionChemical EngineeringElectron TrappingEngineering	1992	41
Gate-induced band-to-band tunneling leakage current in LDD MOSFETs H.-J. Wann, Ko, Chenming Hu Device ModelingElectrical EngineeringEngineeringOxide ScalingTunneling Leakage	1992	33
Hot-carrier effects in thin-film fully depleted SOI MOSFET's Z.J. Ma, H.-J. Wann, Mansun Chan, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringSoi DeviceBias Temperature Instability	1994	26
An accurate model of thin film SOI-MOSFET breakdown voltage J. Chen, F. Assaderaghi, H.-J. Wann, Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringHigh Voltage Engineering	2002	22
Performance and reliability enhancement for CVD tungsten polycided CMOS transistors due to fluorine incorporation in the gate oxide I.-C. Chen, M. Rödder, H.-J. Wann, IEEE Electron Device Letters Cvd TungstenElectrical EngineeringEngineeringNanoelectronicsCmos Transistors	1994	17

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