F. Lallement - Concepedia

Author

F. Lallement

Also Known As

F Lallement, F. Lallement, Fabrice Lallement

Publications

Citations

H-Index

Concepts

All Affiliations

F. Lallement is an author at STMicroelectronics (France) specializing in applied physics, engineering, and microelectronics.

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	75
2	Applied Physics	6	6	75
3	Electrical Engineering	5	5	62
4	Materials Engineering	2	2	29
5	Materials Science	1	1	18

F. Lallement

Publications

Citations

H-Index

Page 1

	Year	Citations
Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration E. Augendre, Loïc Sanchez, L. Benaissa, ECS Transactions EngineeringSilicon On InsulatorSemiconductor DeviceNanoelectronicsRecent Progress	2009	18
USJ formation using pulsed plasma doping J.T. Scheuer, D. Lenoble, J.-P. Reynard, Surface and Coatings Technology EngineeringPhysicsApplied PhysicsPlasma SciencePlasma Physics	2004	13
Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology F. Lallement, A. Grouillet, M. Juhel, Surface and Coatings Technology Electrical EngineeringEngineeringPhysicsNanoelectronicsApplied Physics	2004	11
Plasma doping implant depth profile calculation based on ion energy distribution measurements Ludovic Godet, Ziwei Fang, Svetlana Radovanov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Electrical EngineeringIncident Ion MassEngineeringIon ImplantationApplied Physics	2006	11
Highly-Strained Silicon-On-Insulator Development T. Akatsu, Jean‐Michel Hartmann, C. Aulnette, ECS Transactions Materials EngineeringSemiconductor TechnologyElectrical EngineeringEpitaxial GrowthEngineering	2006	11
Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping F. Lallement, B. Duriez, A. Grouillet, Low-power ElectronicsElectrical EngineeringEngineeringHigh Performance 65NmNanoelectronics	2004	11

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