F. Lallement

Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

E. Augendre, Loïc Sanchez, L. Benaissa et al. · ECS Transactions · 2009 · 18 citations

Engineering, Silicon On Insulator, Semiconductor Device +16

USJ formation using pulsed plasma doping

J.T. Scheuer, D. Lenoble, J.-P. Reynard et al. · Surface and Coatings Technology · 2004 · 13 citations

Engineering, Physics, Applied Physics +4

Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology

F. Lallement, A. Grouillet, M. Juhel et al. · Surface and Coatings Technology · 2004 · 11 citations

Electrical Engineering, Engineering, Physics +8

Plasma doping implant depth profile calculation based on ion energy distribution measurements

Ludovic Godet, Ziwei Fang, Svetlana Radovanov et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2006 · 11 citations · Full text

Electrical Engineering, Incident Ion Mass, Engineering +7

Highly-Strained Silicon-On-Insulator Development

T. Akatsu, Jean‐Michel Hartmann, C. Aulnette et al. · ECS Transactions · 2006 · 11 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +14