Romain Delhougne

Capacitor-less, Long-Retention (>400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

Attilio Belmonte, Hyungrock Oh, Nouredine Rassoul et al. · 2020 · 194 citations

Engineering, Electrical Engineering, Materials Science +16

Understanding and modelling the PBTI reliability of thin-film IGZO transistors

Adrian Chasin, J. Franco, K. Triantopoulos et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 72 citations

Engineering, Electrical Engineering, Physics +17

Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 10³s retention, >10¹¹ cycles endurance and L_g scalability down to 14nm

A. Belmonte, H. Oh, Subhali Subhechha et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 69 citations

Engineering, Materials Engineering, Materials Science +7

Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells

David Tio Castro, L. Goux, G.A.M. Hurkx et al. · 2007 · 54 citations

Engineering, Electrical Engineering, Materials Science +14

Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors

A. Walke, M. Popovici, Kaustuv Banerjee et al. · IEEE Transactions on Electron Devices · 2022 · 51 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17