Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells

Abstract

We present physical and electrical evidence of the Thomson thermo-electric effect in line-type phase-change memory cells. This causes a shift of the molten zone during RESET programming towards the anode contact, and as a consequence the phase change material (PCM) design at the contact area has a significant influence on the program conditions. First statistical studies showed a reduction of minimum Reset currents by 5% and Set voltages by 28% when PCM extensions around the anode are used instead of fine line contacts. This Thomson effect remains important with further cell scaling.