Physically based models of electromigration: From Black’s equation to modern TCAD models

Roberto Lacerda de Orio, H. Ceric, S. Selberherr

Microelectronics Reliability

Electrical EngineeringTcad ModelsEngineeringElectromigration TechniquePhysics +5

Electromigration in submicron interconnect features of integrated circuits

H. Ceric, S. Selberherr

Materials Science and Engineering R Reports

Electrical EngineeringElectromigration TechniqueEngineeringAdvanced Packaging (Semiconductors)Nanoelectronics +5

Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing

Rui Huang, W. Robl, H. Ceric, +2

IEEE Transactions on Device and Materials Reliability

EngineeringSevere Plastic DeformationMechanical EngineeringMicrostructure-strength RelationshipElectronic Packaging +16

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl, +11

Microelectronics Reliability

Device ModelingEngineeringPhysicsBias Temperature InstabilityCondensed Matter Physics +8

Through Silicon Via Reliability

Cathal Cassidy, Jochen Kraft, S. Carniello, +5

IEEE Transactions on Device and Materials Reliability

ReliabilityElectrical EngineeringReliability EngineeringEngineeringAdvanced Packaging (Semiconductors) +12

A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects

H. Ceric, Roberto Lacerda de Orio, J. Cervenka, +1

IEEE Transactions on Device and Materials Reliability

EngineeringMechanical EngineeringAssessing Electromigration ReliabilityInterconnect (Integrated Circuits)Reliability Engineering +18

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, +8

IEEE Transactions on Electron Devices

Device ModelingElectrical EngineeringHot-carrier DegradationEngineeringPhysics +12

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl, +5

Device ModelingElectrical EngineeringHot-carrier DegradationEngineeringStress-induced Leakage Current +10

Hot-carrier degradation caused interface state profile—Simulation versus experiment

Ivan A. Starkov, Stanislav Tyaginov, H. Enichlmair, +6

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Electrical EngineeringHot-carrier DegradationEngineeringCrystalline DefectsPhysics +8

A compact model for early electromigration failures of copper dual-damascene interconnects

Roberto Lacerda de Orio, H. Ceric, S. Selberherr

Microelectronics Reliability

EngineeringEarly Electromigration FailuresInterconnect (Integrated Circuits)Advanced Packaging (Semiconductors)Nanoelectronics +16