Roberto Lacerda de Orio

Physically based models of electromigration: From Black’s equation to modern TCAD models

Roberto Lacerda de Orio, H. Ceric, S. Selberherr · Microelectronics Reliability · 2010 · 148 citations

Natural Sciences, Electrical Engineering, Physics +14

A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects

H. Ceric, Roberto Lacerda de Orio, J. Cervenka et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 54 citations

Engineering, Electrical Engineering, Materials Science +17

Spin and charge drift-diffusion in ultra-scaled MRAM cells

Simone Fiorentini, Mario Bendra, Johannes Ender et al. · Scientific Reports · 2022 · 32 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

A compact model for early electromigration failures of copper dual-damascene interconnects

Roberto Lacerda de Orio, H. Ceric, S. Selberherr · Microelectronics Reliability · 2011 · 29 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Electromigration failure in a copper dual-damascene structure with a through silicon via

Roberto Lacerda de Orio, H. Ceric, S. Selberherr · Microelectronics Reliability · 2012 · 28 citations · Full text

Engineering, Electrical Engineering, Materials Science +17