H. Enichlmair

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Stanislav Tyaginov, Ivan A. Starkov, O. Triebl et al. · Microelectronics Reliability · 2010 · 57 citations

Device Modeling, Engineering, Physics +10

Physics-Based Hot-Carrier Degradation Modeling

Stanislav Tyaginov, Ivan A. Starkov, H. Enichlmair et al. · ECS Transactions · 2011 · 48 citations

Engineering, Thorough Analysis, Nanoelectronics +16

Observations of negative bias temperature instability defect generation via on the fly electron spin resonance

Jason T. Ryan, Patrick M. Lenahan, Tibor Grasser et al. · Applied Physics Letters · 2010 · 47 citations · Full text

Spintronics, Magnetism, Spin Dynamic +15

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer et al. · IEEE Transactions on Electron Devices · 2015 · 39 citations · Full text

Device Modeling, Electrical Engineering, Hot-carrier Degradation +14

Toward Automated Defect Extraction From Bias Temperature Instability Measurements

Dominic Waldhoer, Christian Schleich, Jakob Michl et al. · IEEE Transactions on Electron Devices · 2021 · 37 citations

Engineering, Measurement, Education +23