Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach

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Multiple-gate SOI MOSFETs: device design guidelines

Jong‐Tae Park, J.-P. Colinge · IEEE Transactions on Electron Devices · 2002 · 485 citations

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High performance fully-depleted tri-gate CMOS transistors

B.S. Doyle, Suman Datta, M. Doczy et al. · IEEE Electron Device Letters · 2003 · 453 citations

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Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate

T. Sekigawa, Yutaka Hayashi · Solid-State Electronics · 1984 · 366 citations

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Silicon-on-insulator 'gate-all-around device'

J.-P. Colinge, M.-H. Gao, A. Romano‐Rodrı́guez et al. · 2002 · 350 citations

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