Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

New method for the extraction of MOSFET parameters

G. Ghibaudo · Electronics Letters · 1988 · 822 citations

Numerical Analysis, Device Modeling, Electrical Engineering +9

A new 'shift and ratio' method for MOSFET channel-length extraction

Yuan Taur, D.S. Zicherman, D.R. Lombardi et al. · IEEE Electron Device Letters · 1992 · 222 citations

Device Modeling, Low-power Electronics, Electrical Engineering +9

14nm FDSOI technology for high speed and energy efficient applications

O. Weber, E. Josse, F. Andrieu et al. · 2014 · 89 citations

Low-power Electronics, Electrical Engineering, Engineering +9

$g_{m}/I_{\rm d}$ Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs With Nonlinear Behavior Above Threshold

Denis Flandre, Valeriya Kilchytska, Tamara Rudenko · IEEE Electron Device Letters · 2010 · 83 citations

Device Modeling, Charge Control, Electrical Engineering +9

Measurement of threshold voltage and channel length of submicron MOSFETs

Sanjay Jain · IEE Proceedings I Solid State and Electron Devices · 1988 · 68 citations

Device Modeling, Electrical Engineering, Engineering +9