Study and Comparative Analysis of InAs and GaN-Based High Electron Mobility Transistors

Abstract

In this article, a comparative analysis of InAs and GaN-Based High Electron Mobility Transistors (HEMT) is considered and simulated to study their characteristics. The device is formed using a 2D Electron Gas (2DEG) at the interface of the InAs/InGaAs and AlGaN/GaN layers. The InAs and GaN-Based HEMT device structure are optimized for high-power operation by employing a larger barrier thickness and a high sheet density of the 2-DEG. To obtain a solution of Poisson’s equation is coupled with the 1-D Schrodinger equation to derive the mathematical framework for InAs and GaN layer to compute the surface potential, gate current, gate voltage, gate capacitance, I-V characteristics, cut-off frequency, and output conductance.