Dae-Hyun Kim - Concepedia

Author

Dae-Hyun Kim

Kyungpook National University ORCID

Also Known As

Dae-Hyun Kim, Kim, Dae-Hyun, Taewoo Kim

165

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Kyungpook National University Massachusetts Institute of Technology University of Ulsan NTT (Japan)Korea Advanced Nano Fab Center

About

Dae-Hyun Kim is an author at Kyungpook National University specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	27	1.1K
2	Applied Physics	18	23	977
3	Medicine	2	2	31
4	Health Sciences	1	1	12
5	Natural Sciences	1	1	18

Dae-Hyun Kim

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz Dae-Hyun Kim, Jesús A. del Alamo IEEE Electron Device Letters Wide-bandgap SemiconductorCurrent-gain Cutoff FrequencyEngineeringThin ChannelIntegrated Circuits	2008	159
30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$ Dae-Hyun Kim, Jesús A. del Alamo IEEE Electron Device Letters Electrical EngineeringMillimeter Wave TechnologyInp SubstrateEngineeringPhysics	2010	149
Lateral and Vertical Scaling of <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$</tex></formula> HEMTs for Post-Si-CMOS Logic Applications Dae-Hyun Kim, Jesús A. del Alamo IEEE Transactions on Electron Devices EngineeringIntegrated CircuitsSemiconductor DeviceSemiconductorsElectronic Devices	2008	74
Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition Md. Mamunur Rahman, Jun-Gyu Kim, Dae-Hyun Kim, Micromachines	2019	63
30 nm E-mode InAs PHEMTs for THz and future logic applications Dae-Hyun Kim, Jesús A. del Alamo Wide-bandgap SemiconductorThz PhotonicsEngineeringTerahertz PhotonicsFuture Logic Applications	2008	62
A Self-Aligned InGaAs HEMT Architecture for Logic Applications Niamh Waldron, Dae-Hyun Kim, Jesús A. del Alamo IEEE Transactions on Electron Devices EngineeringElectronic Design AutomationElectronic DesignComputer ArchitectureIntegrated Circuits	2009	60
Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications Dae-Hyun Kim, Jesús A. del Alamo IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesInp Substrate	2010	58
f<inf>T</inf> = 688 GHz and f<inf>max</inf> = 800 GHz in L<inf>g</inf> = 40 nm In<inf>0.7</inf>Ga<inf>0.3</inf>As MHEMTs with g<inf>m_max</inf> &#x003E; 2.7 mS/&#x00B5;m Dae-Hyun Kim, B. Brar, Jesús A. del Alamo Millimeter Wave TechnologyEngineeringRadio FrequencyPhysicsBarrier Layer	2011	49
L<sub>g</sub> = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f<sub>T</sub> and f<sub>max</sub> in excess of 700 GHz Hyeon-Bhin Jo, Do-Young Yun, Ji-Min Baek, Applied Physics Express Electrical EngineeringEngineeringHigh-speed ElectronicsPhysicsHigh-frequency Device	2019	44
Logic Performance of 40 nm InAs HEMTs Dae-Hyun Kim, Jesús A. del Alamo SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2007	40

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