Dae-Hyun Kim

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

Dae-Hyun Kim, Jesús A. del Alamo · IEEE Electron Device Letters · 2008 · 159 citations

Wide-bandgap Semiconductor, Current-gain Cutoff Frequency, Engineering +18

30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$

Dae-Hyun Kim, Jesús A. del Alamo · IEEE Electron Device Letters · 2010 · 149 citations

Electrical Engineering, Millimeter Wave Technology, Inp Substrate +13

Lateral and Vertical Scaling of <formula formulatype="inline"><tex Notation="TeX">$\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$</tex></formula> HEMTs for Post-Si-CMOS Logic Applications

Dae-Hyun Kim, Jesús A. del Alamo · IEEE Transactions on Electron Devices · 2008 · 74 citations

Engineering, Integrated Circuits, Semiconductor Device +16

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

Md. Mamunur Rahman, Jun-Gyu Kim, Dae-Hyun Kim et al. · Micromachines · 2019 · 63 citations · Full text

30 nm E-mode InAs PHEMTs for THz and future logic applications

Dae-Hyun Kim, Jesús A. del Alamo · 2008 · 62 citations

Wide-bandgap Semiconductor, Thz Photonics, Engineering +19