Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect

Quantum capacitance devices

Serge Luryi · Applied Physics Letters · 1988 · 908 citations

Engineering, Electrical Engineering, Physics +17

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

S.-H. Lo, D. A. Buchanan, W. Wang · IEEE Electron Device Letters · 1997 · 812 citations

Engineering, Electrical Engineering, Microelectronics +16

A charge-oriented model for MOS transistor capacitances

D.E. Ward, R.W. Dutton · IEEE Journal of Solid-State Circuits · 1978 · 402 citations

Engineering, Computer Engineering, Electrical Engineering +17

Modeling and Optimization of Fringe Capacitance of Nanoscale DGMOS Devices

Aditya Bansal, Bipul C. Paul, Kaushik Roy · IEEE Transactions on Electron Devices · 2005 · 206 citations

Engineering, Electrical Engineering, Microelectronics +16

Quantitative understanding of inversion-layer capacitance in Si MOSFET's

Shinichi Takagi, Akira Toriumi · IEEE Transactions on Electron Devices · 1995 · 151 citations

Engineering, Electrical Engineering, Materials Science +17