Reshmi Maity

Comparative analysis of the quantum FinFET and trigate FinFET based on modeling and simulation

N. P. Maity, Reshmi Maity, Santanu Maity et al. · Journal of Computational Electronics · 2019 · 66 citations

Device Modeling, Quantum Science, Electrical Engineering +10

Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: Application to high-k material HfO2 based MOS devices

N. P. Maity, Reshmi Maity, S. Baishya · Superlattices and Microstructures · 2017 · 48 citations

Materials Science, Electrical Engineering, Engineering +9

A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices

Niladri Pratap Maity, Reshmi Maity, R. K. Thapa et al. · Superlattices and Microstructures · 2016 · 47 citations

Materials Science, Electrical Engineering, Mos Devices +7

Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET

Suparna Panchanan, Reshmi Maity, Srimanta Baishya et al. · Silicon · 2020 · 40 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11

Analysis of surface potential for dual-material-double-gate MOSFET based on modeling and simulation

Himeli Chakrabarti, Reshmi Maity, N. P. Maity · Microsystem Technologies · 2019 · 38 citations

Device Modeling, Electrical Engineering, Engineering +6