Suparna Panchanan

Modeling, Simulation and Analysis of Surface Potential and Threshold Voltage: Application to High-K Material HfO2 Based FinFET

Suparna Panchanan, Reshmi Maity, Srimanta Baishya et al. · Silicon · 2020 · 40 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11

A surface potential model for tri-gate metal oxide semiconductor field effect transistor: Analysis below 10 nm channel length

Suparna Panchanan, Reshmi Maity, Srimanta Baishya et al. · Engineering Science and Technology an International Journal · 2021 · 27 citations · Full text

Role of Fin Shape on Drain Current of SiO2/HfO2 Based Trigate FinFET Including Quantum Mechanical Effect

Suparna Panchanan, Reshmi Maity, Achinta Baidya et al. · Silicon · 2023 · 16 citations

Electrical Engineering, Engineering, Nanoelectronics +7

Modeling, Simulation and Performance Analysis of Drain Current for Below 10 nm Channel Length Based Tri-Gate FinFET

Suparna Panchanan, Reshmi Maity, Srimanta Baishya et al. · Silicon · 2022 · 10 citations

Charge-Based Trans-Capacitance Model for SiO2/HfO2 Based Nano Scale Trigate FinFET Including Quantum Mechanical Effect

Suparna Panchanan, Reshmi Maity, Srimanta Baishya et al. · Silicon · 2023 · 10 citations