In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

Abstract

In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V<inf>back</inf>, from 2.95 K back to 300 K. An abrupt drop-off in drain current due to intersubband scattering is experienced in the transfer characteristic with a certain V<inf>back</inf>. Moreover, resonant and source-to-drain tunneling transports are observed in devices with minimal channel length at cryogenic temperatures. The threshold voltage, V<inf>T</inf> , and free carrier mobility, &#x00B5;<inf>eff</inf>, and their dependence on the back-gate voltage over a wide range of temperatures are extracted and discussed in detail. This work aims at investigating the impact of back gate potential on V<inf>T</inf> and carrier transport at cryogenic temperatures, further paving the way towards up-scaling of quantum computers.