A CMOS silicon spin qubit

TLDR

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for future quantum processors, and its compatibility with CMOS technology offers a clear advantage for scalable quantum computing architectures and integration with classical control hardware. The study reports a silicon qubit device fabricated using an industry‑standard CMOS process. The device is a two‑gate, p‑type transistor with an undoped channel, where the first gate forms a quantum dot encoding a hole spin qubit and the second gate forms a readout quantum dot, and two‑axis spin control is achieved by phase‑tunable microwave modulation of the first gate. The results demonstrate a viable path to scaling qubits via a readily exploitable CMOS platform.

Abstract

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.