Concepedia

130-GHz fT SiGe HBT technology

Katsuya Oda, E. Ohue, Masamichi Tanabe, Hiromi Shimamoto, T. Onai, Katsuyoshi Washio

International Electron Devices Meeting · 1997 · 29 citations · 6 references

Concepts

EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsMillimeter-wave Integrated CircuitsRadio-frequency DevicesRadio-frequency Packaging

References

6

Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/

A. Schüppen, U. Erben, A. Gruhle et al. · 2002 · 126 citations

Engineering, Electrical Engineering, Materials Science +17

Vertical profile optimization of very high frequency epitaxial Si- and SiGe-base bipolar transistors

E.F. Crabbé, B.S. Meyerson, J.M.C. Stork et al. · 2002 · 84 citations

Engineering, Electrical Engineering, Materials Science +17

SiGe-HBTs with high <i> f <sub>T</sub> </i> at moderatecurrentdensities

A. Schüppen, A. Gruhle, H. Kibbel et al. · Electronics Letters · 1994 · 77 citations

Engineering, Electrical Engineering, Materials Science +16

Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps

E.J. Prinz, James C. Sturm · IEEE Electron Device Letters · 1991 · 58 citations

Engineering, Electrical Engineering, Materials Science +16

Experimental study of AlGaAs/GaAs HBT device design for power applications

M. Hafizi, D.C. Streit, L.T. Tran et al. · IEEE Electron Device Letters · 1991 · 25 citations

Engineering, Electrical Engineering, Materials Science +17