E.J. Prinz

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

E.J. Prinz, P.M. Garone, Peter Schwartz et al. · IEEE Electron Device Letters · 1991 · 115 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10

Growth of Si1−<i>x</i>Ge<i>x</i> by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

James C. Sturm, Peter Schwartz, E.J. Prinz et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 95 citations

Semiconductors, Materials Science, Electrical Engineering +15

High quantum efficiency photoluminescence from localized excitons in Si1−<i>x</i>Ge<i>x</i>

L. C. Lenchyshyn, M. L. W. Thewalt, James C. Sturm et al. · Applied Physics Letters · 1992 · 87 citations

Localized Excitons, Optical Materials, Engineering +16

Silicon nanocrystal based memory devices for NVM and DRAM applications

R. A. Rao, R.F. Steimle, M. Sadd et al. · Solid-State Electronics · 2004 · 85 citations

Non-volatile Memory, Electrical Engineering, Engineering +7

A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory

R. Muralidhar, R.F. Steimle, M. Sadd et al. · 2004 · 63 citations

Non-volatile Memory, Electrical Engineering, Engineering +12