P.M. Garone

Silicon vapor phase epitaxial growth catalysis by the presence of germane

P.M. Garone, James C. Sturm, Peter Schwartz et al. · Applied Physics Letters · 1990 · 117 citations

Natural Sciences, Chemistry, Materials Science +17

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

E.J. Prinz, P.M. Garone, Peter Schwartz et al. · IEEE Electron Device Letters · 1991 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layers

P.M. Garone, V. Venkataraman, James C. Sturm · IEEE Electron Device Letters · 1992 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Hole confinement MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructures

P.M. Garone, V. Venkataraman, J.C. Sturni · IEEE Electron Device Letters · 1991 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon temperature measurement by infrared transmission for rapid thermal processing applications

James C. Sturm, Peter Schwartz, P.M. Garone · Applied Physics Letters · 1990 · 39 citations

Engineering, Materials Engineering, Materials Science +17