Applied Physics Letters · 1990 · 117 citations · 2 references
Natural SciencesChemistryMaterials ScienceCatalysisMaterials ChemistrySemiconductor MaterialsChemical Vapor DepositionCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor InterfacesSilicon MaterialsEpitaxial Film GrowthEpitaxial Growth KineticsEpitaxial Thin-film GrowthGrowth RatesSiliconSilicon Chemical Vapor DepositionSilicon EpitaxyThin-film Growth Mechanisms
Experiments involving the epitaxial growth of GexSi1−x films by chemical vapor deposition have shown that the addition of germane greatly enhances the growth rate, compared to that seen with dichlorosilane alone. Careful analysis shows that the increase is not accounted for by summing the individual growth rates, but clearly indicates that the silicon growth rate is catalyzed. The magnitude of the effect increases at lower temperatures, with a two orders of magnitude increase seen at 625 °C.
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