Growth of Si1−<i>x</i>Ge<i>x</i> by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors

Abstract

Rapid thermal chemical vapor deposition has been applied towards the growth of Si and Si1−xGex structures on a 100 Å scale. In this paper the relative merits of gas switching versus temperature switching for the growth of such structures are discussed. Active temperature control in the 600–700 °C range using infrared transmission for temperature measurement is demonstrated. The growth technique is applied to 45 Å period superlattices with individual layer temperature control, and to heterojunction bipolar transistors with near-ideal electrical characteristics.