L. C. Lenchyshyn

High quantum efficiency photoluminescence from localized excitons in Si1−<i>x</i>Ge<i>x</i>

L. C. Lenchyshyn, M. L. W. Thewalt, James C. Sturm et al. · Applied Physics Letters · 1992 · 87 citations

Localized Excitons, Optical Materials, Engineering +16

Quantum confinement effects in strained silicon-germanium alloy quantum wells

X. Xiao, C. W. Liu, James C. Sturm et al. · Applied Physics Letters · 1992 · 69 citations

Engineering, Optoelectronic Devices, Semiconductor Nanostructures +18

Room-temperature 1.3 μm electroluminescence from strained Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

Q. Mi, X. Xiao, James C. Sturm et al. · Applied Physics Letters · 1992 · 68 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Photoluminescence from electron-hole plasmas confined in Si/Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

X. Xiao, C. W. Liu, James C. Sturm et al. · Applied Physics Letters · 1992 · 60 citations

Semiconductors, Photoluminescence, Hole Densities +10

Exciton luminescence in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures grown by molecular beam epitaxy

N. L. Rowell, J.-P. Noël, D. C. Houghton et al. · Journal of Applied Physics · 1993 · 53 citations

Semiconductors, Materials Science, Luminescence Intensity +15