High quantum efficiency photoluminescence from localized excitons in Si1−<i>x</i>Ge<i>x</i>

L. C. Lenchyshyn, M. L. W. Thewalt, James C. Sturm, +5

Applied Physics Letters

Localized ExcitonsOptical MaterialsEngineeringEpitaxial Si1−xgex LayersOptoelectronic Devices +14

Quantum confinement effects in strained silicon-germanium alloy quantum wells

X. Xiao, C. W. Liu, James C. Sturm, +4

Applied Physics Letters

EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsQuantum Materials +16

Room-temperature 1.3 μm electroluminescence from strained Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

Q. Mi, X. Xiao, James C. Sturm, +2

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +9

Photoluminescence from electron-hole plasmas confined in Si/Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

X. Xiao, C. W. Liu, James C. Sturm, +2

Applied Physics Letters

SemiconductorsPhotoluminescenceHole DensitiesEngineeringPhysics +8

Exciton luminescence in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures grown by molecular beam epitaxy

N. L. Rowell, J.-P. Noël, D. C. Houghton, +4

Journal of Applied Physics

SemiconductorsMaterials ScienceLuminescence IntensityOptical MaterialsEngineering +13

Voltage-tuning in multi-color quantum well infrared photodetector stacks

L. C. Lenchyshyn, H. C. Liu, M. Buchanan, +1

Journal of Applied Physics

PhotonicsQuantum ScienceElectrical EngineeringEngineeringPhotoluminescence +10

Visible photoluminescence from biexcitons in Si1-xGex quantum wells

T. Steiner, L. C. Lenchyshyn, M. L. W. Thewalt, +3

Solid State Communications

PhotonicsPhotoluminescenceEngineeringPhysicsVisible Photoluminescence +4

Photoluminescence study of nitrogen-oxygen donors in silicon

A G Steele, L. C. Lenchyshyn, M. L. W. Thewalt

Applied Physics Letters

Localized Excited StateEngineeringExcitation Energy TransferChemistrySilicon On Insulator +18

High Temperature (77–300 K) Photo- and Electroluminescence in Si/Si_1-xGe_x Heterostructures

James C. Sturm, A. St. Amour, Q. Mi, +2

Japanese Journal of Applied Physics

SemiconductorsSemiconductor TechnologyElectrical EngineeringPhotoluminescenceEngineering +13

Mid-wavelength infrared detection with In_xGa_1-xAs/Al_0.45Ga_0.55As multiple quantum well structures

L. C. Lenchyshyn, H C Liu, M. Buchanan, +1

Semiconductor Science and Technology

EngineeringIntersubband TransitionsMid-wavelength Infrared DetectionInxga1-xas/al0.45ga0.55as Multiple QuantumOptical Properties +14