X. Xiao

The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

E.J. Prinz, P.M. Garone, Peter Schwartz et al. · IEEE Electron Device Letters · 1991 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Quantum confinement effects in strained silicon-germanium alloy quantum wells

X. Xiao, C. W. Liu, James C. Sturm et al. · Applied Physics Letters · 1992 · 69 citations

Engineering, Materials Science, Physics +17

Room-temperature 1.3 μm electroluminescence from strained Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

Q. Mi, X. Xiao, James C. Sturm et al. · Applied Physics Letters · 1992 · 68 citations

Engineering, Materials Engineering, Materials Science +17

Silicide/strained Si/sub 1-x/Ge/sub x/ Schottky-barrier infrared detectors

X. Xiao, James C. Sturm, S. R. Parihar et al. · IEEE Electron Device Letters · 1993 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Photoluminescence from electron-hole plasmas confined in Si/Si1−<i>x</i>Ge<i>x</i>/Si quantum wells

X. Xiao, C. W. Liu, James C. Sturm et al. · Applied Physics Letters · 1992 · 60 citations

Engineering, Materials Science, Physics +17