D. C. Houghton

Strain relaxation kinetics in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures

D. C. Houghton · Journal of Applied Physics · 1991 · 386 citations

Natural Sciences, Materials Science, Physics +17

Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation

D. E. Jesson, Stephen J. Pennycook, J.‐M. Baribeau et al. · Physical Review Letters · 1993 · 257 citations

Natural Sciences, Materials Engineering, Materials Science +17

Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence

T. K. Sham, Dawei Jiang, I. Coulthard et al. · Nature · 1993 · 194 citations

Natural Sciences, Materials Engineering, Materials Science +14

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

J.-P. Noël, N. L. Rowell, D. C. Houghton et al. · Applied Physics Letters · 1990 · 161 citations

Engineering, Materials Engineering, Materials Science +17

Resonant tunneling in Si/Si1−<i>x</i>Ge<i>x</i> double-barrier structures

H. C. Liu, D. Landheer, M. Buchanan et al. · Applied Physics Letters · 1988 · 148 citations

Engineering, Electrical Engineering, Materials Science +17