D. C. Houghton

Strain relaxation kinetics in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures

D. C. Houghton · Journal of Applied Physics · 1991 · 386 citations

Materials Science, Strain Relaxation Kinetics, Engineering +11

Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation

D. E. Jesson, Stephen J. Pennycook, J.‐M. Baribeau et al. · Physical Review Letters · 1993 · 256 citations

Materials Science, Engineering, Severe Plastic Deformation +14

Origin of luminescence from porous silicon deduced by synchrotron-light-induced optical luminescence

T. K. Sham, Dawei Jiang, I. Coulthard et al. · Nature · 1993 · 192 citations

Materials Science, Photonics, Optical Materials +8

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

J.-P. Noël, N. L. Rowell, D. C. Houghton et al. · Applied Physics Letters · 1990 · 161 citations

Materials Science, Photonics, Semiconductors +14

Resonant tunneling in Si/Si1−<i>x</i>Ge<i>x</i> double-barrier structures

H. C. Liu, D. Landheer, M. Buchanan et al. · Applied Physics Letters · 1988 · 147 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14