J.-P. Noël

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

J.-P. Noël, N. L. Rowell, D. C. Houghton et al. · Applied Physics Letters · 1990 · 161 citations

Materials Science, Photonics, Semiconductors +14

Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

T. Manku, J.M. McGregor, Arokia Nathan et al. · IEEE Transactions on Electron Devices · 1993 · 101 citations

Materials Engineering, Materials Science, Semiconductor Technology +13

High quantum efficiency photoluminescence from localized excitons in Si1−<i>x</i>Ge<i>x</i>

L. C. Lenchyshyn, M. L. W. Thewalt, James C. Sturm et al. · Applied Physics Letters · 1992 · 87 citations

Localized Excitons, Optical Materials, Engineering +16

Luminescence origins in molecular beam epitaxial Si1−<i>x</i>Ge<i>x</i>

J.-P. Noël, N. L. Rowell, D. C. Houghton et al. · Applied Physics Letters · 1992 · 79 citations

Semiconductors, Materials Science, Photoluminescence +13

New technique for the characterization of Si/SiGe layers using heterostructure MOS capacitors

Sorin P. Voinigescu, K. Iniewski, R. Lisak et al. · Solid-State Electronics · 1994 · 54 citations

Electrical Engineering, Si/sige Layers, Engineering +7