Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

Abstract

Results of the drift hole mobility in strained and unstrained SiGe alloys are reported for Ge fractions varying from 0 to 30% and doping levels of 10/sup 15/-10/sup 19/ cm/sup -3/. The mobilities are calculated taking into account acoustic, optical, alloy, and ionized-impurity scattering. The mobilities are then compared with experimental results for a boron doping concentration of 2*10/sup 19/ cm/sup -3/. Good agreement between experimental and theoretical values is obtained. The results show an increase in the mobility relative to that of silicon.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>