D.J. Roulston - Concepedia

Author

D.J. Roulston

Also Known As

D. J. ROULSTON, D. J. Roulston, D. Roulston, D.J Roulston, D.J. Roulston, David J Roulston, David J. Roulston, David Roulston, Roulston, David

168

Publications

3.6K

Citations

H-Index

Concepts

All Affiliations

University of Waterloo Institute for Microstructural Sciences

About

D.J. Roulston is an author at University of Waterloo specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	42	3K
2	Electrical Engineering	19	36	1.8K
3	Applied Physics	18	28	2.5K
4	Computer Engineering	6	6	122
5	Business	1	1	238

D.J. Roulston

Publications

Citations

H-Index

Page 1

	Year	Citations
Electron and hole mobilities in silicon as a function of concentration and temperature Neha Arora, John R. Hauser, D.J. Roulston IEEE Transactions on Electron Devices EngineeringBrooks-herring TheorySilicon On InsulatorCharge TransportSemiconductor Device	1982	949
A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers S.C. Jain, D.J. Roulston Solid-State Electronics Band Gap NarrowingElectrical EngineeringEngineeringPhysicsSimple Expression	1991	392
VBIC95, the vertical bipolar inter-company model Colin C. McAndrew, J.A. Seitchik, Derek F. Bowers, IEEE Journal of Solid-State Circuits Device ModelingIndustrial DesignElectrical EngineeringEngineeringIndustrial Engineering	1996	238
Band-gap narrowing in novel III-V semiconductors S.C. Jain, J.M. McGregor, D.J. Roulston Journal of Applied Physics SemiconductorsElectrical EngineeringEngineeringPhysicsBand-gap Narrowing	1990	234
Modeling and measurement of minority-carrier lifetime versus doping in diffused layers of n<sup>+</sup>-p silicon diodes D.J. Roulston, Neha Arora, S.G. Chamberlain IEEE Transactions on Electron Devices Minority-carrier Lifetime VersusEngineeringDiffused LayersSemiconductor MaterialsOptoelectronic Devices	1982	210
Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys T. Manku, J.M. McGregor, Arokia Nathan, IEEE Transactions on Electron Devices Materials EngineeringMaterials ScienceSemiconductor TechnologySemiconductor DeviceEngineering	1993	101
The role of the interfacial layer in polysilicon emitter bipolar transistors A.A. Eltoukhy, D.J. Roulston IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringTunneling EquationsBipolar Transistor	1982	88
Diffusion length determination in <i>p</i>-<i>n</i> junction diodes and solar cells Neha Arora, S.G. Chamberlain, D.J. Roulston Applied Physics Letters EngineeringPhotovoltaic DevicesPhotovoltaicsSemiconductor DeviceBase Region	1980	54
New buried P+-grid polysilicon emitter bipolar power transistor M. Jagadesh Kumar, D.J. Roulston Solid-State Electronics Electrical EngineeringEngineeringPower DeviceElectronic EngineeringPower Semiconductor Device	1995	51
Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects D.J. Roulston, S.G. Chamberlain, J. Sehgal IEEE Transactions on Electron Devices Numerical AnalysisEngineeringCurrent FlowSemiconductor DeviceNumerical Computation	1972	51

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