Journal of Applied Physics · 1990 · 235 citations · 16 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsCompound SemiconductorsIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapBand Gap DeterminationBand Gap EnergyBand Gap PredictionElectronic Band GapEnergy Band GapNarrow-bandgap Semiconductors
A predictive model for band-gap narrowing has been applied to several III-V semiconductors. Band-gap narrowing is expressed as ΔEg =AN1/3+BN1/4+CN1/2 ; values for A, B, and C are predicted for these materials. The commonly used N1/3 relation is shown to be valid for the p-type materials considered, but not for n-type materials.
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Physical properties of semiconductors
Choice Reviews Online · 1989 · 472 citations
Heavily doped semiconductors and devices
R. A. Abram, G.J. Rees, B.L.H. Wilson · Advances In Physics · 1978 · 313 citations · Full text
Energy gap in Si and Ge: Impurity dependence
G. D. Mahan · Journal of Applied Physics · 1980 · 288 citations