J.M. McGregor - Concepedia

Author

J.M. McGregor

University of Waterloo

Also Known As

J. M. McGregor, J. McGregor, J.M. McGregor, Joel M. McGregor, Joel McGregor

Publications

487

Citations

H-Index

Concepts

All Affiliations

University of Waterloo Institute for Microstructural Sciences National Research Council Canada

About

J.M. McGregor is an author at University of Waterloo specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	448
2	Applied Physics	6	6	403
3	Electrical Engineering	6	6	325
4	Computer Engineering	1	1	31
5	Materials Engineering	1	1	101

J.M. McGregor

Publications

448

Citations

H-Index

Page 1

	Year	Citations
Band-gap narrowing in novel III-V semiconductors S.C. Jain, J.M. McGregor, D.J. Roulston Journal of Applied Physics SemiconductorsElectrical EngineeringEngineeringPhysicsBand-gap Narrowing	1990	234
Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys T. Manku, J.M. McGregor, Arokia Nathan, IEEE Transactions on Electron Devices Materials EngineeringMaterials ScienceSemiconductor TechnologySemiconductor DeviceEngineering	1993	101
A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications Rashid Bashir, F. Hébert, J. DeSantis, IEEE Transactions on Electron Devices Vertically Integrated PnpElectrical EngineeringPolycrystalline Silicon EmittersEngineeringVlsi Design	2001	31
Modified simple expression for bandgap narrowing in n-type GaAs S.C. Jain, J.M. McGregor, D.J. Roulston, Solid-State Electronics Electrical EngineeringEngineeringSimple ExpressionApplied PhysicsOptoelectronics	1992	22
Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex J.M. McGregor, T. Manku, J.-P. Noël, Journal of Electronic Materials In-plane Hole DriftEngineeringPhysicsApplied PhysicsCondensed Matter Physics	1993	22
Bipolar transistor base bandgap grading for minimum delay J.M. McGregor, T. Manku, D.J. Roulston Solid-State Electronics Electrical EngineeringEngineeringHigh-frequency DeviceElectronic EngineeringMinimum Delay	1991	14
Output conductance of bipolar transistors with large neutral-base recombination current J.M. McGregor, D.J. Roulston, J.-P. Noël, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringLarge Output ConductanceNeutral Base Recombination	1992	13
Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors D.J. Roulston, J.M. McGregor Solid-State Electronics Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsBandgap Gradient	1992	11

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