Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex - Concepedia

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Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1−xGex

22

Citations

10

References

1993

Year

J.M. McGregor, T. Manku, J.-P. Noël, D.J. Roulston, Arokia Nathan, D. C. Houghton

Journal of Electronic Materials

In-plane Hole DriftEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsSemiconductor MaterialSilicon On InsulatorHall MobilitySemiconductor Device

References

	Year	Citations

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