F. Hébert

A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications

Rashid Bashir, F. Hébert, J. DeSantis et al. · IEEE Transactions on Electron Devices · 2001 · 31 citations

Vertically Integrated Pnp, Electrical Engineering, Polycrystalline Silicon Emitters +12

Building blocks of past, present and future BCD technologies

F. Hébert, Pirooz Parvarandeh, Ming Li et al. · 2021 · 18 citations

Engineering, Future Bcd Technologies, Energy Efficiency +17

0.35μm, 30V fully isolated and low-Ron nLDMOS for DC-DC applications

Kyungho Lee, Haeung Jeon, Byung-Hee Cho et al. · 2013 · 17 citations

Low-power Electronics, Electrical Engineering, Engineering +11

Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequencies

F. Hébert, D.J. Roulston · Solid-State Electronics · 1988 · 15 citations

Device Modeling, Electrical Engineering, Physical Design (Electronics) +10

Modeling of narrow-base bipolar transistors including variable-base-charge and avalanche effects

F. Hébert, D.J. Roulston · IEEE Transactions on Electron Devices · 1987 · 15 citations

Device Modeling, Electrical Engineering, Bipolar Transistor Model +13