Electron and hole mobilities in silicon as a function of concentration and temperature

Abstract

An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\sim 10^{20}</tex> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.