A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers - Concepedia

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A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

392

Citations

50

References

1991

Year

S.C. Jain, D.J. Roulston

Solid-State Electronics

Band Gap NarrowingElectrical EngineeringEngineeringPhysicsSimple ExpressionApplied PhysicsSemiconductor MaterialMicroelectronicsOptoelectronicsSemiconductor Device

References

	Year	Citations

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