A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

The physics of semiconductor devices

H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations

Engineering, Materials Science, Physics +12

<i>Advances in Electronics and Electron Physics</i>

L. Marton, Robert L. Sproull · Physics Today · 1960 · 1.8K citations

Natural Sciences, Electrical Engineering, Physics +13

Intrinsic concentration, effective densities of states, and effective mass in silicon

Martin A. Green · Journal of Applied Physics · 1990 · 757 citations

Engineering, Materials Science, Physics +17

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 752 citations

Engineering, Electrical Engineering, Physics +13

Thomas-Fermi Approach to Impure Semiconductor Band Structure

E. O. Kane · Physical Review · 1963 · 650 citations

Natural Sciences, Physics, Condensed Matter Physics +13