N. L. Rowell

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

J.-P. Noël, N. L. Rowell, D. C. Houghton et al. · Applied Physics Letters · 1990 · 161 citations

Engineering, Materials Engineering, Materials Science +17

Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy

D. J. Lockwood, Guolin Yu, N. L. Rowell · Solid State Communications · 2005 · 135 citations

Natural Sciences, Materials Science, Physics +14

Probing intermediates of the induction period prior to nucleation and growth of semiconductor quantum dots

Mingyang Liu, Kun Wang, Linxi Wang et al. · Nature Communications · 2017 · 131 citations · Full text

Natural Sciences, Chemistry, Physics +17

Ge dots and nanostructures grown epitaxially on Si

X. Wu, N. L. Rowell, D. J. Lockwood · Journal of Physics Condensed Matter · 2006 · 106 citations

Natural Sciences, Materials Engineering, Materials Science +17

Normal acoustic modes and Brillouin scattering in single-mode optical fibers

Peter J. Thomas, N. L. Rowell, H. M. van Driel et al. · Physical review. B, Condensed matter · 1979 · 105 citations

Natural Sciences, Materials Science, Physics +16