N. L. Rowell

Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−<i>x</i>Ge<i>x</i> alloys

J.-P. Noël, N. L. Rowell, D. C. Houghton et al. · Applied Physics Letters · 1990 · 161 citations

Materials Science, Photonics, Semiconductors +14

Optical phonon frequencies and damping in AlAs, GaP, GaAs, InP, InAs and InSb studied by oblique incidence infrared spectroscopy

D. J. Lockwood, Guolin Yu, N. L. Rowell · Solid State Communications · 2005 · 133 citations

Optical Materials, Optical Phonon Frequencies, Engineering +10

Probing intermediates of the induction period prior to nucleation and growth of semiconductor quantum dots

Mingyang Liu, Kun Wang, Linxi Wang et al. · Nature Communications · 2017 · 126 citations · Full text

Ge dots and nanostructures grown epitaxially on Si

J.‐M. Baribeau, X. Wu, N. L. Rowell et al. · Journal of Physics Condensed Matter · 2006 · 105 citations

Materials Science, Ii-vi Semiconductor, Engineering +11

Normal acoustic modes and Brillouin scattering in single-mode optical fibers

Peter J. Thomas, N. L. Rowell, H. M. van Driel et al. · Physical review. B, Condensed matter · 1979 · 105 citations

Normal Acoustic Modes, Photonics, Optical Materials +15