IEEE Electron Device Letters · 1991 · 25 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice ScalingHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Semiconductor DevicesWide Band Gap SemiconductorsBase-emitter Junction BiasingDevice Scaling EffectsExperimental Study DesignHeterojunction Bipolar TransistorsPower Electronics DevicesPower OutputPower Output OptimizationTransistor Scaling
An experimental study of AlGaAs/GaAs heterojunction bipolar transistor (HBT) device design for optimizing key DC and RF performance parameters relevant to power device applications is reported. The design of the collector, base, and base-emitter junction is investigated for improved power device performance, and novel device structures are presented. Device scaling effects and the extent to which air-bridged interconnect can reduce parasitics in large power devices are also explored. Power HBTs employing some of the optimized design features have achieved a power output of 1.2 W (4 W/mm) with 43% power-added efficiency at 10 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Breakdown behavior of GaAs/AlGaAs HBTs
J.J. Chen, Guangjun Gao, Jen‐Inn Chyi et al. · IEEE Transactions on Electron Devices · 1989 · 53 citations