P.-F. Lu

Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors

P.-F. Lu, T.-C. Chen · IEEE Transactions on Electron Devices · 1989 · 109 citations

Semiconductor Technology, Electrical Engineering, Avalanche Effect +10

Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology

J.H. Comfort, G.L. Patton, John D. Cressler et al. · 2002 · 52 citations

Engineering, Vlsi Design, Integrated Circuits +18

A submicrometer high-performance bipolar technology

T.-C. Chen, K.-Y. Toh, John D. Cressler et al. · IEEE Electron Device Letters · 1989 · 41 citations

Electrical Engineering, Device Topography, Engineering +12

A reduced-field design concept for high-performance bipolar transistors

D.D. Tang, P.-F. Lu · IEEE Electron Device Letters · 1989 · 37 citations

Device Modeling, Electrical Engineering, Semiconductor Device +15

Low-temperature avalanche multiplication in the collector-base junction of advanced n-p-n transistors

P.-F. Lu · IEEE Transactions on Electron Devices · 1990 · 30 citations

Engineering, Collector-base Junction, Semiconductor Device +16