T.-C. Chen - Concepedia

Author

T.-C. Chen

IBM Research - Thomas J. Watson Research Center

Also Known As

T.-C. CHEN, T.-C. Chen

Publications

406

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

T.-C. Chen is an author at IBM Research - Thomas J. Watson Research Center specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	402
2	Electrical Engineering	11	12	402
3	Applied Physics	8	8	318
4	Materials Science	2	2	48
5	Education	1	1	41

T.-C. Chen

Publications

402

Citations

H-Index

Page 1

	Year	Citations
Collector-base junction avalanche effects in advanced double-poly self-aligned bipolar transistors P.-F. Lu, T.-C. Chen IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringAvalanche EffectEngineeringBase-current Reversal	1989	109
Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors G.P. Li, E. Hackbarth, T.-C. Chen IEEE Transactions on Electron Devices SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesEngineering	1988	69
A submicrometer high-performance bipolar technology T.-C. Chen, K.-Y. Toh, John D. Cressler, IEEE Electron Device Letters Electrical EngineeringDevice TopographyEngineeringHigh-speed ElectronicsMeasurement	1989	41
50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles J. Warnock, John D. Cressler, K.A. Jenkins, IEEE Electron Device Letters EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceIon-implanted Base Profiles	1990	39
Selective epitaxy base transistor (SEBT) Joachim N. Burghartz, B.J. Ginsberg, Sebastian Mäder, IEEE Electron Device Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	1988	30
On the narrow-emitter effect of advanced shallow-profile bipolar transistors G.P. Li, C.T. Chuang, T.-C. Chen, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringElectronic DevicesEngineeringPolysilicon Emitter	1988	29
A 23 ps/2.1 mW ECL gate K.-Y. Toh, C.T. Chuang, T.-C. Chen, Low-power ElectronicsElectrical EngineeringEmitter WidthEngineeringVlsi Design	2003	18
An advanced bipolar transistor with self-aligned ion-planted base and W/poly emitter T.-C. Chen, C.T. Chuang, G.P. Li, IEEE Transactions on Electron Devices Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1988	18
Scaling the silicon bipolar transistor for sub-100-ps ECL circuit operation at liquid nitrogen temperature John D. Cressler, T.-C. Chen, J.D. Warnock, IEEE Transactions on Electron Devices EngineeringVlsi DesignIntegrated CircuitsElectronic DevicesHigh-speed Electronics	1990	14
Sub-300-ps CBL circuits S.K. Widemann, T.-C. Chen, C.T. Chuang, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignCircuit Design	1989	13

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