E. Hackbarth

Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design

D.D. Tang, E. Hackbarth · IEEE Transactions on Electron Devices · 1988 · 100 citations

Electrical Engineering, Reliability Engineering, Engineering +14

Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors

G.P. Li, E. Hackbarth, T.-C. Chen · IEEE Transactions on Electron Devices · 1988 · 69 citations

Semiconductors, Device Modeling, Electrical Engineering +15

Inherent and stress-induced leakage in heavily doped silicon junctions

E. Hackbarth, D.D. Tang · IEEE Transactions on Electron Devices · 1988 · 60 citations

Engineering, Avalanche Leakage Components, Integrated Circuits +16

Design considerations of high-performance narrow-emitter bipolar transistors

D.D. Tang, Tze-Chiang Chen, Ching-Te Chuang et al. · IEEE Electron Device Letters · 1987 · 41 citations

Electrical Engineering, Engineering, Shallow Impurity Profile +11

On the very-high-current degradations on Si n-p-n transistors

D.D. Tang, E. Hackbarth, T.-C. Chen · IEEE Transactions on Electron Devices · 1990 · 38 citations

Electrical Engineering, Electronic Devices, Engineering +13