N.H. Sheng - Concepedia

Author

N.H. Sheng

Rockwell Automation (United States)

Also Known As

N H Sheng, N. H. Sheng, N.-H. Sheng, N.H. Sheng, Neng H. Sheng, Ningrui Sheng, P.M. Asbeck

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Rockwell Automation (United States)University of California, Santa Barbara University of California San Diego

About

N.H. Sheng is an author at Rockwell Automation (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	26	990
2	Electrical Engineering	18	25	979
3	Applied Physics	16	19	760
4	Computer Engineering	4	4	108
5	Materials Science	2	2	24

N.H. Sheng

Publications

Citations

H-Index

Page 1

	Year	Citations
GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application P.M. Asbeck, Mau-Chung Frank Chang, J.A. Higgins, IEEE Transactions on Electron Devices Microwave CircuitsElectrical EngineeringDigital Performance StatusEngineeringHigh-frequency Device	1989	209
Heterojunction Bipolar Transistors for Microwave and Millimeter-Wave Integrated Circuits P.M. Asbeck, Mau-Chung Frank Chang, K.-C. Wang, IEEE Transactions on Microwave Theory and Techniques Microwave CircuitsElectrical EngineeringPresent StatusEngineeringMillimeter Wave Technology	1987	94
Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits P.M. Asbeck, Mau-Chung Frank Chang, K.-C. Wang, IEEE Transactions on Electron Devices Microwave CircuitsElectrical EngineeringPresent StatusGaalas/gaas Hbt TechnologyEngineering	1987	88
Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz N.L. Wang, N.H. Sheng, Mau-Chung Frank Chang, IEEE Transactions on Microwave Theory and Techniques Microwave CircuitsElectrical EngineeringMicrowave Power HbtsEngineeringCb Hbts	1990	84
Multiple-channel GaAs/AlGaAs high electron mobility transistors N.H. Sheng, C.P. Lee, R.T. Chen, IEEE Electron Device Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesTransconductance Degradation	1985	59
A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's C. W. Farley, K.C. Wang, Mau-Chung Frank Chang, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringEngineeringHigh-speed ElectronicsAlinas/gainas Hbt	1989	37
A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier N.H. Sheng, W.J. Ho, N.L. Wang, IEEE Microwave and Guided Wave Letters Electrical EngineeringGhz Broadband Amplifier-3-Db Roll-off BandwidthEngineeringRf Semiconductor	1991	35
AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems K. Runge, D. Daniel, R. D. Standley, IEEE Journal of Solid-State Circuits EngineeringFiber OpticsIntegrated CircuitsAlgaas/gaas Hbt IcGb/s Decision Circuit	1992	30
High power GaAlAs/GaAs HBTs for microwave applications N.H. Sheng, Mau-Chung Frank Chang, P.M. Asbeck, Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceElectronic Engineering	1987	29
High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors Chien-Ping Lee, H.T. Wang, G.J. Sullivan, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringQuantum DeviceElectronic Engineering	1987	28

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