IEEE Transactions on Electron Devices · 1987 · 88 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesBipolar Junction TransistorsHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsMicrowave Semiconductor DevicesSemiconductor HeterostructuresDividersGaas Microwave Integrated CircuitsGainHeterojunction Bipolar TransistorsHeterojunction DevicesHeterostructure TransistorsMicrowave DevicesMillimeter-wave Integrated Circuits
This paper reviews the present status of GaAlAs/GaAs HBT technology and projects the impact of these devices on microwave and millimeter-wave integrated circuits. Devices with f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> above 120 GHz are described. Differential amplifiers are shown to have offset voltages with standard deviation below 2 mV and voltage gain as high as 200 per stage. Breakdown voltages (BV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CBO</inf> ) above 20 V are demonstrated. Frequency dividers operating above 20 GHz are described.