Concepedia

Base-emitter Junction Biasing

Base-Emitter Junction Biasing is a transistor biasing technique that establishes a predetermined voltage or current condition across the base-emitter junction of a bipolar junction transistor to ensure stable and predictable operation in the active region.

30

Publications

1K

Citations

103

Authors

27

Institutions

Publications per year

2017–2026

1

Parents

Publications

30

Physical Principles Involved in Transistor Action

J. Bardeen, W. H. Brattain · Physical Review · 1949 · 196 citations

, , +17

Identification and implication of a perimeter tunneling current component in advanced self-aligned bipolar transistors

G.P. Li, E. Hackbarth, T.-C. Chen · IEEE Transactions on Electron Devices · 1988 · 70 citations

, , +17

Semiconductor Diodes and Transistors as Electrical Thermometers

A. G. McNamara · Review of Scientific Instruments · 1962 · 70 citations

, , +15

Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology

S.P. Joshi, R. Lahri, Craig Lage · 1987 · 60 citations

, , +16

Spin-polarized current amplification and spin injection in magnetic bipolar transistors

Jaroslav Fabian, Igor Žutić · Physical Review B · 2004 · 59 citations · Full text

, , +17

1–5 of 30

Authors

103

  1. JB
    J. Bardeen

    University of Illinois Urbana-Champaign, United States

    2 publications · 212 citations

    2

    h-index

  2. WH
    W. H. Brattain

    NTT (Japan), Japan

    2 publications · 212 citations

    2

    h-index

  3. JG
    J. G. Eden

    University of Illinois Urbana-Champaign, United States

    2 publications · 48 citations

    2

    h-index

  4. CJ
    C. J. Wagner

    University of Illinois Urbana-Champaign, United States

    2 publications · 48 citations

    2

    h-index

  5. JF
    Jaroslav Fabian

    University of Regensburg, Germany

    1 publications · 59 citations

    1

    h-index

1–5 of 103

Institutions

27

  1. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    2 h-index

    4 publications

    244 citations

  2. IBM (United States)

    Armonk, United States

    2 h-index

    4 publications

    220 citations

  3. University of Illinois Urbana-Champaign

    Urbana, United States

    2 h-index

    7 publications

    159 citations

  4. Philips (Netherlands)

    Amsterdam, The Netherlands

    2 h-index

    3 publications

    67 citations

  5. Hitachi (Japan)

    Tokyo, Japan

    2 h-index

    11 publications

    130 citations

  6. National Research Council Canada

    Ottawa, Canada

    1 h-index

    1 publications

    70 citations

  7. University of Maryland, College Park

    College Park, United States

    1 h-index

    1 publications

    59 citations

  8. AMS (Austria)

    Unterpremstätten, Austria

    1 h-index

    5 publications

    55 citations

1–8 of 27

Venues

  1. IEEE Transactions on Electron Devices

    4 publications · 131 citations

    4

    h-index

  2. Solid-State Electronics

    3 publications · 75 citations

    3

    h-index

  3. Applied Physics Letters

    3 publications · 60 citations

    3

    h-index

  4. Electronics Letters

    2 publications · 40 citations

    2

    h-index

  5. IEEE Electron Device Letters

    2 publications · 80 citations

    2

    h-index

1–5