M. Hafizi - Concepedia

Author

M. Hafizi

HRL Laboratories (United States)

Also Known As

M. E. HAFIZI, M. E. Hafizi, M. Hafizi, M.E. Hafizi, Madjid E. Hafizi, Madjid Hafizi

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)Redondo Optics (United States)Nokia (United States)University of Padua University of Southern California

About

M. Hafizi is an author at HRL Laboratories (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	30	988
2	Electrical Engineering	20	30	988
3	Applied Physics	18	25	785
4	Computer Engineering	4	4	165
5	Materials Science	1	1	53

M. Hafizi

Publications

Citations

H-Index

Page 1

	Year	Citations
The DC characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling M. Hafizi, C.R. Crowell, Matt Grupen IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringElectronic DevicesEngineeringSemiconductor Device	1990	96
Characterization of GaAs/Ga1−<i>x</i>Al<i>x</i>As heterojunction bipolar transistor structures using photoreflectance Xin Yin, Fred H. Pollak, L. M. Pawlowicz, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1990	81
A multistandard, multiband SoC with integrated BT, FM, WLAN radios and integrated power amplifier Chungyeol Paul Lee, Arya Behzad, B. Marholev, Wireless CommunicationsEngineeringRadio FrequencyWireless LanMicrowave Transmission	2010	70
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology M. Hafizi, J.F. Jensen, Robert A. Metzger, IEEE Electron Device Letters Electrical EngineeringMillimeter Wave TechnologyEngineeringRadio FrequencyAlinas/gainas Hbt Devices	1992	61
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology J.F. Jensen, M. Hafizi, W.E. Stanchina, Electrical EngineeringMillimeter Wave TechnologyEngineeringInp SubstratesRadio Frequency	2003	56
High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts D.C. Streit, A.K. Oki, D.K. Umemoto, IEEE Electron Device Letters SemiconductorsMaterials ScienceElectrical EngineeringHigh-reliability Gaas-algaas HbtsEngineering	1991	53
Reliability analysis of GaAs/AlGaAs HBTs under forward current/temperature stress M. Hafizi, L. M. Pawlowicz, L.T. Tran, ReliabilityWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2002	47
GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz K.W. Kobayashi, R. Esfandiari, M. Hafizi, IEEE Transactions on Microwave Theory and Techniques Electrical EngineeringChip SizeEngineeringRf SemiconductorGaas Hbt	1991	43
An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs W.E. Stanchina, J.F. Jensen, R.H. Walden, EngineeringHbt Ic TechnologyAnalog DesignHigh-speed DigitalIntegrated Circuits	2002	41
Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's M. Hafizi, W.E. Stanchina, Robert A. Metzger, IEEE Transactions on Electron Devices Electrical EngineeringElectronic DevicesHigh Temperature MaterialsAlinas/gainas HbtHigh Voltage Engineering	1993	36

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